Role of surface defect states in visible luminescence from oxidized hydrogenated amorphous Si/hydrogenated amorphous Ge multilayers

Applied Physics Letters

Volumn 74, Issue 25, 1999, Pages 3773-3775

  Xu, Jun ^a   He, ZhenHong ^a   Chen, Kunji ^a   Huang, Xinfan ^a   Feng, Duan ^a   Han, Hexiang ^b   Wang, Zhaoping ^b   Li, Guohua ^b  

^a NANJING UNIVERSITY   (China)

^b INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; CRYSTAL DEFECTS; EMISSION SPECTROSCOPY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYDROGENATION; NANOSTRUCTURED MATERIALS; OXIDATION; PHOTOLUMINESCENCE; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON COMPOUNDS; SILICA;

WAVE NUMBERS;

SEMICONDUCTING FILMS;

EID: 0032606315     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124175     Document Type: Article

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