Threshold voltage dependence of LOCOS-isolated thin-film SOI nMOSFET on buried oxide thickness

IEEE Electron Device Letters

Volumn 20, Issue 9, 1999, Pages 478-480

  Lee, Jong Wook ^a   Kim, Hyung Ki ^a   Oh, Min Rok ^a   Koh, Yo Hwan ^a  

^a Hynix Semiconductor Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

OXIDATION; OXIDES; SEMICONDUCTING BORON; SEMICONDUCTING SILICON; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES; THIN FILM DEVICES; THRESHOLD VOLTAGE;

BURIED OXIDES;

MOSFET DEVICES;

EID: 0032595842     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.784458     Document Type: Article

References (8)

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