High programming throughput 0.35 μ m p-channel DINOR flash memory

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1996, Pages 222-223

  Sakamoto, O ^a   Onoda, H ^a   Katayama, T ^a   Hayashi, K ^a   Yamasaki, N ^a   Sakakibara, K ^a   Ohnakado, T ^a   Takada, H ^a   Tsuji, N ^a   Ajika, N ^a   Hatanaka, M ^a   Miyoshi, H ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRON TUNNELING; FABRICATION; LEAKAGE CURRENTS; SEMICONDUCTOR DEVICE STRUCTURES;

BAND TO BAND TUNNELING INDUCED HOT ELECTRON INJECTION PROGRAMMING; HIGH DENSITY FLASH MEMORY;

SEMICONDUCTOR STORAGE;

EID: 0029723468     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)