Site controlled metal and semiconductor quantum dots on epitaxial fluoride films

Microelectronic Engineering

Volumn 47, Issue 1, 1999, Pages 135-137

  Tsutsui, K ^a   Kawasaki, K ^a   Mochizuki, M ^a   Matsubara, T ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CALCIUM COMPOUNDS; ELECTRON BEAMS; MOLECULAR BEAMS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; TUNNEL JUNCTIONS;

ELECTRON BEAM MODIFICATION METHOD; EPITAXIAL FLUORIDE FILMS; MULTITUNNELING JUNCTIONS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0032594727     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00171-9     Document Type: Article

References (3)

1. K. Kawasaki, et al., Jpn. J. Appl. Phys., 37 (1998) 1508.
2. K. Kawasaki, et al., Jpn. J. Appl. Phys., 35 (1996) 6689.
3. K. Uejima, et al., Jpn. J. Appl. Phys., 36 (1997) 4088.