Single electron effects in silicon quantum dots in a MOSFET structure

Microelectronic Engineering

Volumn 47, Issue 1, 1999, Pages 189-191

  Khoury, M ^a   Gunther, A ^a   Rack, M J ^a   Pivin Jr , D P ^a   Ferry, D K ^a  

^a Arizona State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRON BEAM LITHOGRAPHY; FABRICATION; GATES (TRANSISTOR); MAGNETIC FIELDS; MOSFET DEVICES; REACTIVE ION ETCHING;

ELECTROSTATIC CONFINEMENT; SILICON QUANTUM DOTS; SINGLE ELECTRON EFFECTS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0032594660     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00186-0     Document Type: Article

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