Control of surface current on a Si(111) surface by using nanofabrication

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 6 B, 1999, Pages 3866-3870

  Heike, Seiji ^a,b   Watanabe, Satoshi ^c   Wada, Yasuo ^a,b   Hashizume, Tomihiro ^a  

^a HITACHI LTD   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENT CONTROL; ELECTRON ENERGY LEVELS; ELECTRON SPECTROSCOPY; ELECTRON TUNNELING; FABRICATION; NANOTECHNOLOGY; SCANNING TUNNELING MICROSCOPY; SCHOTTKY BARRIER DIODES; SURFACE PROPERTIES;

NANOFABRICATION; TUNNELING SPECTROSCOPY;

SEMICONDUCTING SILICON;

EID: 0032594508     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.3866     Document Type: Article

References (13)

1. G. Binnig, H. Rohrer, Ch. Gerber and E. Weibel: Phys. Rev. Lett. 49 (1982) 57.
2. R. Wolkow and Ph. Avouris: Phys. Rev. Lett. 60 (1988) 1049.
3. Y. Hasegawa and Ph. Avouris: Phys. Rev. Lett. 71 (1993) 1071.
4. H. Uchida, D. Huang, J. Yoshinobu and M. Aono: Surf. Sci. 287/288 (1993) 1036.
5. S. Hosoki, S. Hosaka and T. Hasegawa: Appl. Surf. Sci. 60/61 (1991) 643.
6. D. M. Eigler and E. K. Schweizer: Nature 344 (1990) 524.
7. T. Hashizume, S. Heike, M. I. Lutwyche, S. Watanabe, K. Nakajima, T. Nishi and Y. Wada: Jpn. J. Appl. Phys. 35 (1996) L1085.
8. J. Bardeen: Phys. Rev. 71 (1947) 717.
9. S. Heike, S. Watanabe, Y. Wada and T. Hashizume: Phys. Rev. Lett. 81 (1998) 890.
10. I. W. Lyo and Ph. Avouris: Science 253 (1991) 176.
11. M. Aono, A. Kobayashi, F. Grey, H. Uchida and D. H. Huang: Jpn. J. Appl. Phys. 32 (1993) 1470.
12. S. Kurtin, T. C. McGill and C. A. Mead: Phys. Rev. Lett. 22 (1969) 1433.
13. J.A. Kubby, Y.R. Wang and W.J. Greene: Phys. Rev. B 43 (1991) 9346.