Observations of two separable photoquenching phenomena in lightly n-type bulk GaAs by optical absorption, Hall effect, and positron annihilation

Applied Physics Letters

Volumn 69, Issue 23, 1996, Pages 3462-3464

  Tuzemen S ^a,c   Le Berre, C ^a   Corbel, C ^a   Brozel, M R ^b   Yildirim, M ^c  

^a Centre National de la Recherche Scientifique   (France)

^b UNIVERSITY OF MANCHESTER   (United Kingdom)

^c ATATÜRK UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL DEFECTS; ELECTRON ENERGY LEVELS; ELECTRONS; HALL EFFECT; LIGHT ABSORPTION; LOW TEMPERATURE OPERATIONS; PHOTOCONDUCTIVITY; VOLTAGE MEASUREMENT;

BAND EDGE; PHOTOQUENCHING; POSITRON ANNIHILATION; REVERSE CONTRAST ABSORPTION; VACANCY TYPE DEFECTS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030566563     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117252     Document Type: Article

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