Influence of retarding hydrogen diffusion in boron phosphosilicate glass on annealing damage of metal-oxide semiconductor transistors

Journal of the Electrochemical Society

Volumn 146, Issue 8, 1999, Pages 3065-3069

  Yamaha, Takahisa ^a   Masuoka, Fujio ^b  

^a YAMAHA CORPORATION   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; ANNEALING; COMPOSITION EFFECTS; DIFFUSION IN SOLIDS; HYDROGEN; MOSFET DEVICES; TITANIUM;

ANNEALING DAMAGE; BORON PHOSPHOSILICATE GLASS; GETTERING; RETARDING HYDROGEN DIFFUSION;

BOROSILICATE GLASS;

EID: 0032592402     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1392051     Document Type: Article

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