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Volumn 540, Issue , 1999, Pages 79-84
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Local structural changes of ion damaged InGaAs
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Author keywords
[No Author keywords available]
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Indexed keywords
AMORPHIZATION;
ANNEALING;
ARGON;
CRYSTAL STRUCTURE;
FREE ENERGY;
ION IMPLANTATION;
NUCLEATION;
RADIATION DAMAGE;
SEMICONDUCTING INDIUM COMPOUNDS;
TEMPERATURE;
X RAY ANALYSIS;
AMORPHOUS STATE;
EXTENDED X RAY ABSORPTION FINE STRUCTURE;
ION CHANNELING TECHNIQUE;
ION DAMAGE;
LIQUID NITROGEN TEMPERATURE;
ROOM TEMPERATURE;
SEMICONDUCTING INDIUM GALLIUM ARSENIDE;
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EID: 0032592218
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Article |
Times cited : (1)
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References (19)
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