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Volumn 35, Issue 9, 1999, Pages 1277-1283

Characterization of a distributed feedback laser with air/semiconductor gratings embedded by the wafer fusion technique

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; DIFFRACTION GRATINGS; ESTIMATION; OPTICAL MATERIALS; REFRACTIVE INDEX; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SILICON WAFERS;

EID: 0032590977     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.784587     Document Type: Article
Times cited : (14)

References (30)
  • 1
    • 0023043012 scopus 로고
    • Wafer bonding for silicon-on-insulator technologies
    • J. B. Lasky, "Wafer bonding for silicon-on-insulator technologies," Appl. Phys. Lett., vol. 48, pp. 78-80, 1986.
    • (1986) Appl. Phys. Lett. , vol.48 , pp. 78-80
    • Lasky, J.B.1
  • 2
  • 3
    • 21544474791 scopus 로고
    • Wafer fusion: A novel technique for optoelectronic device fabrication and monolithic integration
    • Z. L. Liau and D. E. Mull, "Wafer fusion: A novel technique for optoelectronic device fabrication and monolithic integration," Appl. Phys. Lett., vol. 56, pp. 737-739, 1990.
    • (1990) Appl. Phys. Lett. , vol.56 , pp. 737-739
    • Liau, Z.L.1    Mull, D.E.2
  • 4
    • 0027911766 scopus 로고
    • Semiconductor lasers on Si substrates using the technology of bonding by atomic rearrangement
    • Y. H. Lo, R. Bhat, D. M. Hwang, C. Chua, and C.-H. Lin, "Semiconductor lasers on Si substrates using the technology of bonding by atomic rearrangement," Appl. Phys. Lett., vol. 62, pp. 1038-1040, 1993.
    • (1993) Appl. Phys. Lett. , vol.62 , pp. 1038-1040
    • Lo, Y.H.1    Bhat, R.2    Hwang, D.M.3    Chua, C.4    Lin, C.-H.5
  • 5
    • 0028509792 scopus 로고
    • Effects of heat treatment on bonding properties in InP-to-Si direct wafer bonding
    • H. Wada and T. Kamijoh, "Effects of heat treatment on bonding properties in InP-to-Si direct wafer bonding," Jpn. J. Appl. Phys., vol. 33, pp. 4878-4879, 1994.
    • (1994) Jpn. J. Appl. Phys. , vol.33 , pp. 4878-4879
    • Wada, H.1    Kamijoh, T.2
  • 6
    • 0029254731 scopus 로고
    • Low-threshold pulsed operation of long-wavelength lasers on Si fabricated by direct bonding
    • K. Mori, K. Tokutome, and S. Sugou, "Low-threshold pulsed operation of long-wavelength lasers on Si fabricated by direct bonding," Electron. Lett., vol. 31, pp. 284-285, 1995.
    • (1995) Electron. Lett. , vol.31 , pp. 284-285
    • Mori, K.1    Tokutome, K.2    Sugou, S.3
  • 7
    • 0029254731 scopus 로고
    • Low-threshold pulsed operation of long-wavelength lasers on Si fabricated by direct bonding
    • K. Mori, K. Tokutome, and S. Sugou, "Low-threshold pulsed operation of long-wavelength lasers on Si fabricated by direct bonding," Electron. Lett., vol. 31, pp. 284-285, 1995.
    • (1995) Electron. Lett. , vol.31 , pp. 284-285
    • Mori, K.1    Tokutome, K.2    Sugou, S.3
  • 8
    • 21544450368 scopus 로고
    • Bonding by atomic rearrangement of InP/InGaAsP 1.5 μm wavelength lasers on GaAs substrates
    • Y. H. Lo, R. Bhat, D. M. Hwang, M. A. Koza, and T. P. Lee, "Bonding by atomic rearrangement of InP/InGaAsP 1.5 μm wavelength lasers on GaAs substrates," Appl. Phys. Lett., vol. 58, pp. 1961-1963, 1991.
    • (1991) Appl. Phys. Lett. , vol.58 , pp. 1961-1963
    • Lo, Y.H.1    Bhat, R.2    Hwang, D.M.3    Koza, M.A.4    Lee, T.P.5
  • 12
    • 21544466248 scopus 로고
    • Electrical characteristics of directly-bonded GaAs and InP
    • H. Wada, Y. Ogawa, and T. Kamijoh, "Electrical characteristics of directly-bonded GaAs and InP," Appl. Phys. Lett., vol. 62, pp. 738-740, 1993
    • (1993) Appl. Phys. Lett. , vol.62 , pp. 738-740
    • Wada, H.1    Ogawa, Y.2    Kamijoh, T.3
  • 16
    • 0031170176 scopus 로고    scopus 로고
    • Direct wafer bonding of III-V compound semiconductors for free-material and free-orientation integration
    • Y. Okuno, K. Uomi, M. Aoki, and T. Tsuchiya, "Direct wafer bonding of III-V compound semiconductors for free-material and free-orientation integration," IEEE J. Quantum Electron. vol. 33, pp. 959-969, 1997.
    • (1997) IEEE J. Quantum Electron. , vol.33 , pp. 959-969
    • Okuno, Y.1    Uomi, K.2    Aoki, M.3    Tsuchiya, T.4
  • 17
    • 0030189725 scopus 로고    scopus 로고
    • New realization method for three-dimensional photonic crystal in optical wavelength region
    • S. Noda, N. Yamamoto, and A. Sasaki, "New realization method for three-dimensional photonic crystal in optical wavelength region," Jpn. J. Appl. Phys., vol. 35, pp. L909-L912, 1996.
    • (1996) Jpn. J. Appl. Phys. , vol.35
    • Noda, S.1    Yamamoto, N.2    Sasaki, A.3
  • 18
    • 0031120175 scopus 로고    scopus 로고
    • Distributed feedback surface-emitting laser with air/semiconductor gratings embedded by mass-transport assisted wafer fusion technique
    • M. Imada, S. Noda, A. Sasaki, H. Kobayashi, and G. Sasaki, "Distributed feedback surface-emitting laser with air/semiconductor gratings embedded by mass-transport assisted wafer fusion technique," IEEE Photon. Technol. Lett., vol. 9, pp. 419-421, 1997.
    • (1997) IEEE Photon. Technol. Lett. , vol.9 , pp. 419-421
    • Imada, M.1    Noda, S.2    Sasaki, A.3    Kobayashi, H.4    Sasaki, G.5
  • 19
    • 0000647676 scopus 로고    scopus 로고
    • Characterization of inp air/semiconductor gratings formed by mass-transport assisted wafer fusion technique and its application to distributed feedback laser
    • M. Imada, T. Ishibashi, and S. Noda, "Characterization of InP air/semiconductor gratings formed by mass-transport assisted wafer fusion technique and its application to distributed feedback laser," Jpn. J. Appl. Phys., vol. 37, pp. 1400-1404, 1998.
    • (1998) Jpn. J. Appl. Phys. , vol.37 , pp. 1400-1404
    • Imada, M.1    Ishibashi, T.2    Noda, S.3
  • 20
    • 22944472810 scopus 로고
    • Surface-energy-induced mass-transport phenomenon in annealing of etched compound semiconductor structures: Theoretical modeling and experiment confirmation
    • Z. L. Liau and H. J. Zeiger, "Surface-energy-induced mass-transport phenomenon in annealing of etched compound semiconductor structures: Theoretical modeling and experiment confirmation," J. Appl. Phys., vol. 67, pp. 2434-2440, 1990.
    • (1990) J. Appl. Phys. , vol.67 , pp. 2434-2440
    • Liau, Z.L.1    Zeiger, H.J.2
  • 21
    • 0021392364 scopus 로고
    • Effect of mirror facets on lasing characteristics of distributed feedback InGaAsP/InP laser diodes at 1.5 μm range
    • K. Utaka, S. Akiba, K. Sakai, and Y. Matsushima, "Effect of mirror facets on lasing characteristics of distributed feedback InGaAsP/InP laser diodes at 1.5 μm range," IEEE J. Quantum Electron., vol. QE-20, pp. 236-245, 1984.
    • (1984) IEEE J. Quantum Electron. , vol.QE-20 , pp. 236-245
    • Utaka, K.1    Akiba, S.2    Sakai, K.3    Matsushima, Y.4
  • 22
    • 0000631563 scopus 로고
    • Monolithic integration of an AlGaAs/GaAs multiple quantum well distributed feedback laser and a grating coupler for surface emission
    • S. Noda, K. Kojima, K. Mitsunaga, K. Kyuma, K. Hamanaka, and T. Nakayama, "Monolithic integration of an AlGaAs/GaAs multiple quantum well distributed feedback laser and a grating coupler for surface emission," Appl. Phys. Lett., vol. 51, pp. 1200-1202, 1987.
    • (1987) Appl. Phys. Lett. , vol.51 , pp. 1200-1202
    • Noda, S.1    Kojima, K.2    Mitsunaga, K.3    Kyuma, K.4    Hamanaka, K.5    Nakayama, T.6
  • 23
    • 0015331570 scopus 로고
    • Coupled-wave theory of distributed feedback lasers
    • H. Kogelnik and C. V. Shank, "Coupled-wave theory of distributed feedback lasers," J. Appl. Phys., vol. 43, pp. 2327-2335, 1972.
    • (1972) J. Appl. Phys. , vol.43 , pp. 2327-2335
    • Kogelnik, H.1    Shank, C.V.2
  • 24
    • 0015673632 scopus 로고
    • Mode guidance parallel to the junction plane of double heterostructure GaAs lasers
    • F. R. Nash, "Mode guidance parallel to the junction plane of double heterostructure GaAs lasers," J. Appl. Phys., vol. 44, pp. 4696-4707, 1973.
    • (1973) J. Appl. Phys. , vol.44 , pp. 4696-4707
    • Nash, F.R.1
  • 25
    • 0016572155 scopus 로고
    • Coupling coefficients for distributed feedback single- and double-heterostructure diode lasers
    • W. Streifer, D. R. Scifres, and R. D. Burnham, "Coupling coefficients for distributed feedback single- and double-heterostructure diode lasers," IEEE J. Quantum Electron., vol. QE-11, pp. 867-873, 1975.
    • (1975) IEEE J. Quantum Electron. , vol.QE-11 , pp. 867-873
    • Streifer, W.1    Scifres, D.R.2    Burnham, R.D.3
  • 26
    • 0016980738 scopus 로고
    • Analysis of grating-coupled radiation in GaAs:AlGaAs lasers and waveguides
    • _, "Analysis of grating-coupled radiation in GaAs:AlGaAs lasers and waveguides," IEEE J. Quantum Electron., vol. QE-12, pp. 422-428, 1976.
    • (1976) IEEE J. Quantum Electron. , vol.QE-12 , pp. 422-428
  • 30
    • 0026174176 scopus 로고
    • Threshold-current analysis of InGaAs-InGaAsP multiquantum well separate-confinement lasers
    • M. Rosenzweig, M. Möhrle, H. Düser, and H. Venghaus, "Threshold-current analysis of InGaAs-InGaAsP multiquantum well separate-confinement lasers," IEEE J. Quantum Electron., vol. 27, pp. 1804-1811, 1991.
    • (1991) IEEE J. Quantum Electron. , vol.27 , pp. 1804-1811
    • Rosenzweig, M.1    Möhrle, M.2    Düser, H.3    Venghaus, H.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.