Correlated insulating states of an interacting bilayer electron system

Surface Science

Volumn 361-362, Issue , 1996, Pages 106-112

  Manoharan, H C ^a   Suen, Y W ^a,b   Santos, M B ^a,c   Shayegan, M ^a  

^a Princeton University   (United States)

^b NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

^c UNIVERSITY OF OKLAHOMA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEGREES OF FREEDOM (MECHANICS); ELECTRON TRANSPORT PROPERTIES; ELECTRONIC STRUCTURE; HALL EFFECT; MAGNETIC VARIABLES MEASUREMENT; MULTILAYERS; QUANTUM THEORY; SEMICONDUCTOR QUANTUM WELLS; STABILIZATION;

BILAYER ELECTRON SYSTEM; CORRELATED INSULATING STATES; ELECTRON DISTRIBUTION; TOTAL FILLING FACTOR; WIGNER CRYSTAL;

ELECTRIC INSULATION;

EID: 16744364627     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00343-3     Document Type: Article

References (21)

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18. SAS directly from the Fourier transforms at very low n.
19. Due to the rapid change of resistivity with respect to B around the critical points, the exact threshold value we choose does not significantly alter the topology of the phase diagram and hence any of our conclusions.
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