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84889186760
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note
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f ≈ 3.0 ns for rhB.
-
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36
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84889197620
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note
-
-1) = 1250 s. Thus, for this irradiation, the survival probability after 30 s was exp(-30/1250) = 0.976.
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84889188096
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note
-
We maintained a maximum counts/frame per pixel of less than ∼0.1, or ∼90 counts/30 s per pixel, to avoid serious saturation in the maximum photosensitivity. With this criterion, the frequency of counting two photoelectrons as one photoelectron in each pixel during the frame time is lower than 5% of the number of correctly counted photoelectrons.
-
-
-
-
39
-
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84889187248
-
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note
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2 irradiation. We attributed the low background photocounts to the use of the photon-counting technique and to the optically clean surfaces of the Si wafers.
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40
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0029064356
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84889226687
-
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note
-
f = 1.
-
-
-
-
43
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84889228004
-
-
note
-
f (<50 ps) observed on the wafers covered with a 11-Å-thick oxide layer.
-
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-
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44
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0342715726
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84889190395
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note
-
We used a cryostat for microscopy use (Microstat, Oxford), and ×40 or ×20 objectives because of the limitations of the working distance and defocusing of the spots due to the window thickness (1.5 mm) of the cryostat
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46
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0029482204
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