Small-signal deep level transient spectroscopy on hydrogenated amorphous silicon based metal/insulator/semiconductor structures

Journal of Applied Physics

Volumn 84, Issue 12, 1998, Pages 6906-6910

  Thurzo, Ilja ^a   Nádaždy, Vojtech ^a   Teramura, Satoshi ^b   Durný, Rudolf ^b,c   Kumeda, Minoru ^b   Shimizu, Tatsuo ^b  

^a INSTITUTE OF PHYSICS   (Slovakia)

^b KANAZAWA UNIVERSITY   (Japan)

^c SLOVAK UNIVERSITY OF TECHNOLOGY   (Slovakia)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC EXCITATION; ELECTRON ENERGY LEVELS; ELECTRON TRAPS; ELECTRONIC DENSITY OF STATES; ENERGY GAP; HYDROGEN; INTERFACES (MATERIALS); NEGATIVE IONS; OXIDATION; TEMPERATURE;

EXCITATION PULSES; HIGH TEMPERATURE TAIL; HYDROGENATED SILICON;

MIS DEVICES;

EID: 0032534427     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.368978     Document Type: Article

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