Structure analysis of defects in nanometer space inside a crystal: Creation and agglomeration of point defects in Si and Ge revealed by high- resolution electron microscopy

Microscopy Research and Technique

Volumn 40, Issue 4, 1998, Pages 313-335

  Takeda, S ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

Electron; Electron diffraction channeling; Ge; HRTEM; Irradiation; Point defects; Si; Surface; 100 defect; 113 defects

Indexed keywords

AGGLOMERATION; CRYSTAL ATOMIC STRUCTURE; ELECTRON IRRADIATION; ELECTRONIC STRUCTURE; ELECTRONS; GERMANIUM; POINT DEFECTS; SILICON; SURFACE DEFECTS;

ELECTRON DIFFRACTION CHANNELING; GE; HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; NEW RESULTS; SI; STRUCTURAL STUDIES; STRUCTURE ANALYSIS; STRUCTURE DETERMINATION; {100} DEFECT; {113} DEFECT;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

ARTICLE; COMPLEX FORMATION; CRYSTAL STRUCTURE; ELECTRON MICROSCOPY; LUMINESCENCE; MOLECULAR INTERACTION; NONHUMAN; PRIORITY JOURNAL; SEMICONDUCTOR; STRUCTURE ANALYSIS; TECHNIQUE;

EID: 0032519636     PISSN: 1059910X     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1097-0029(19980215)40:4<313::AID-JEMT6>3.0.CO;2-S     Document Type: Article

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