Study of electron-irradiation-induced defects in GaP by in-situ optical spectroscopy in a transmission electron microscope

Journal of Electron Microscopy

Volumn 45, Issue 1, 1996, Pages 73-78

  Ohno, Yutaka ^a   Takeda, Seiji ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

CL; Frenkel defect; GaP; PL; TEM

Indexed keywords

ELECTRONS; GALLIUM PHOSPHIDE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; III-V SEMICONDUCTORS; LUMINESCENCE;

FRENKEL DEFECTS; IN-SITU OPTICAL SPECTROSCOPY; IN-SITU TRANSMISSION ELECTRON MICROSCOPIES; INTERSTITIAL ATOMS; IRRADIATION-INDUCED DEFECTS; LUMINESCENCE INTENSITY; PL; TEM; TEM IMAGES; TRANSMISSION ELECTRON;

ELECTRON IRRADIATION;

EID: 2642702665     PISSN: 00220744     EISSN: None     Source Type: Journal    
DOI: 10.1093/oxfordjournals.jmicro.a023415     Document Type: Article

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