Decay of ultraviolet-induced optical absorption in Ge-doped SiO2 glass

Applied Physics Letters

Volumn 73, Issue 11, 1998, Pages 1481-1483

  Ohama, Motoshi ^a   Fujiwara, Takumi ^a   Ikushima, Akira J ^a  

^a TOYOTA TECHNOLOGICAL INSTITUTE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; DIFFRACTION GRATINGS; DOPING (ADDITIVES); ELECTRIC FIELDS; SECOND HARMONIC GENERATION; SEMICONDUCTING GERMANIUM; SILICA; TEMPERATURE;

NEUTRAL OXYGEN DIVACANCY; NEUTRAL OXYGEN MONOVACANCY; ULTRAVIOLET INDUCED OPTICAL ABSORPTION; VAPOR AXIAL DEPOSITION;

LIGHT ABSORPTION;

EID: 0032516946     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122179     Document Type: Article

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