Exciton transport into a single GaAs quantum wire studied by picosecond near-field optical spectroscopy

Applied Physics Letters

Volumn 73, Issue 15, 1998, Pages 2176-2178

  Richter, A ^a   Suptitz M ^a   Heinrich, D ^a   Lienau, Ch ^a   Elsaesser, T ^a   Ramsteiner, M ^b   Notzel R ^b   Ploog, K H ^b  

^a MAX BORN INSTITUT   (Germany)

^b PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ENERGY LEVELS; ELECTRON TRAPS; EMISSION SPECTROSCOPY; EPITAXIAL GROWTH; LUMINESCENCE; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; PHONONS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

OPTICAL EXCITATION; OPTICAL SPECTROSCOPY; PHONON EMISSION;

SEMICONDUCTOR QUANTUM WIRES;

EID: 0032511683     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122414     Document Type: Article

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