Integral stress in ion-implanted silicon

Journal of Physics D: Applied Physics

Volumn 31, Issue 21, 1998, Pages 2991-2996

  Tamulevicius S ^a   Pozela I ^a   Jankauskas, J ^a  

^a KAUNAS UNIVERSITY OF TECHNOLOGY   (Lithuania)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; CURRENT DENSITY; INTERFEROMETRY; ION IMPLANTATION; IONS; MATHEMATICAL MODELS; POINT DEFECTS; STRAIN; STRESS RELAXATION; STRESSES; VISCOUS FLOW;

INTEGRAL STRESS; ION IMPLANTED SILICON;

SEMICONDUCTING SILICON;

EID: 0032494626     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/31/21/002     Document Type: Article

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