A simple model of radiation swelling of silicon

Materials Science and Engineering B

Volumn 40, Issue 2-3, 1996, Pages 141-146

  Tamulevičius, Sigitas ^a   Pozela I ^a   Andrulevicius M ^a  

^a KAUNAS UNIVERSITY OF TECHNOLOGY   (Lithuania)

Author keywords

Radiation swelling; Silicon

Indexed keywords

CONCENTRATION (PROCESS); CURRENT DENSITY; DIFFUSION; ION IMPLANTATION; IRRADIATION; MATHEMATICAL MODELS; RADIATION DAMAGE; STRESSES; SWELLING;

ION FLUX DENSITY; RADIATION DEFECTS; RADIATION SWELLING;

SEMICONDUCTING SILICON;

EID: 0030231514     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/0921-5107(96)01595-4     Document Type: Article

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