Observation of high electric field at ZnSe/GaAs heterointerfaces by fast Fourier transformed photoreflectance

Thin Solid Films

Volumn 334, Issue 1-2, 1998, Pages 11-14

  Nukeaw, Jiti ^a   Fujiwara, Yasufumi ^a   Takeda, Yoshikazu ^a   Funato, Mitsuru ^b   Aoki, Satoshi ^b   Fujita, Shizuo ^b   Fujita, Shigeo ^b  

^a NAGOYA UNIVERSITY   (Japan)

^b KYOTO UNIVERSITY   (Japan)

Author keywords

Electric field; Fast Fourier transform; Photoreflectance; ZnSe GaAs heterointerface

Indexed keywords

ENERGY GAP; FAST FOURIER TRANSFORMS; LIGHT REFLECTION; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH; X RAY PHOTOELECTRON SPECTROSCOPY;

FRANZ-KELDYSH OSCILLATIONS (FKO);

HETEROJUNCTIONS;

EID: 0032483880     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)01107-9     Document Type: Article

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