Observation of electric fields at surface and interface of doped GaAs/semi-insulating GaAs structures by fast fourier transformed photoreflectance

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 11, 1997, Pages 7019-7023

  Nukeaw, Jiti ^a   Fujiwara, Yasufumi ^a   Takeda, Yoshikazu ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

Doped GaAs semi insulating GaAs structures; Fast Fourier transform; Interface electric field; Photoreflectance; Surface electric field

Indexed keywords

ELECTRIC FIELDS; FAST FOURIER TRANSFORMS; HELIUM NEON LASERS; INTERFACES (MATERIALS); LIGHT REFLECTION; MOLECULAR BEAM EPITAXY; OPTICAL PUMPING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

PHOTOREFLECTANCE SPECTROSCOPY;

SEMICONDUCTOR JUNCTIONS;

EID: 0031271223     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.7019     Document Type: Article

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