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Journal of Crystal Growth

Volumn 195, Issue 1-4, 1998, Pages 524-529

High-quality InAs/GaAs quantum dots grown by low-pressure metalorganic vapor-phase epitaxy

(7) Sagnes, I a Prevot I a Patriarche, G a Le Roux, G a Gayral, B a Lemaitre A a Gerard J M a

a ORANGE LABS (France)

Author keywords

InAs; Microcavity; MOVPE; Photoluminescence; Quantum dots; TEM; X ray diffraction

Indexed keywords

ELECTRIC VARIABLES MEASUREMENT; HIGH RESOLUTION ELECTRON MICROSCOPY; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

INDIUM ARSENIDE; LOW-PRESSURE METALLORGANIC VAPOR-PHASE EPITAXY; MICROCAVITIES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0032477231 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(98)00580-6 Document Type: Article

Times cited : (5)

References (12)

1
- 0029304536
- J.M. Gérard, J.B. Génin, J. Lefebvre, J.M. Moison, N. Lebouché, F. Barthe, J. Crystal Growth 150 (1995) 351.
- (1995) J. Crystal Growth , vol.150 , pp. 351
- Gérard, J.M.¹ Génin, J.B.² Lefebvre, J.³ Moison, J.M.⁴ Lebouché, N.⁵ Barthe, F.⁶

2
- 0003703851
- E. Burstein, C. Weisbuch (Eds.), Plenum Press, New York
- J.M. Gérard, in: E. Burstein, C. Weisbuch (Eds.), Confined Electrons and Photons, Plenum Press, New York, 1995.
- (1995) Confined Electrons and Photons
- Gérard, J.M.¹

3
- 0348043711
- D. Leonard, K. Pond, P.M. Petroff, Phys. Rev. B 50 (1994) 11687.
- (1994) Phys. Rev. B , vol.50 , pp. 11687
- Leonard, D.¹ Pond, K.² Petroff, P.M.³

4
- 0010338077
- J. Oshinowo, M. Nishioda, S. Ishida, Y. Arakawa, Appl. Phys. Lett. 65 (1994) 1422.
- (1994) Appl. Phys. Lett. , vol.65 , pp. 1422
- Oshinowo, J.¹ Nishioda, M.² Ishida, S.³ Arakawa, Y.⁴

5
- 0031558192
- F. Heinrichsdorff, M.H. Mao, N. Kirstaedter, A. Krost, D. Bimberg, A.O. Kosogov, P. Werner, Appl. Phys. Lett. 71 (1997) 22.
- (1997) Appl. Phys. Lett. , vol.71 , pp. 22
- Heinrichsdorff, F.¹ Mao, M.H.² Kirstaedter, N.³ Krost, A.⁴ Bimberg, D.⁵ Kosogov, A.O.⁶ Werner, P.⁷

6
- 0348088590
- French Patent 84-12788, August 1984
- R. Mellet, French Patent 84-12788, August 1984.
- Mellet, R.¹

7
- 0022665053
- C. d'Anterroches, J.Y. Marzin, G. Le Roux, L. Goldstein, J. Crystal Growth 81 (1987) 121.
- (1987) J. Crystal Growth , vol.81 , pp. 121
- D'Anterroches, C.¹ Marzin, J.Y.² Le Roux, G.³ Goldstein, L.⁴

8
- 0030646544
- M. Geiger, A. Bauknecht, F. Adler, H. Schweizer, F. Scholz, J. Crystal Growth 170 (1997) 558.
- (1997) J. Crystal Growth , vol.170 , pp. 558
- Geiger, M.¹ Bauknecht, A.² Adler, F.³ Schweizer, H.⁴ Scholz, F.⁵

9
- 0028494161
- J.Y. Marzin, J.M. Gérard, A. Izraël, D. Barrier, G. Bastard, Phys. Rev. Lett. 73 (1994) 716.
- (1994) Phys. Rev. Lett. , vol.73 , pp. 716
- Marzin, J.Y.¹ Gérard, J.M.² Izraël, A.³ Barrier, D.⁴ Bastard, G.⁵

10
- 0024715663
- J.L. Jewell, A. Scherer, S.L. McCall, Y.H. Lee, S. Walker, J.P. Harbison, L.T. Florez, Electron. Lett. 25 (1989) 1123.
- (1989) Electron. Lett. , vol.25 , pp. 1123
- Jewell, J.L.¹ Scherer, A.² McCall, S.L.³ Lee, Y.H.⁴ Walker, S.⁵ Harbison, J.P.⁶ Florez, L.T.⁷

11
- 85016887704
- submitted
- T. Rivera, J.P. Debray, J.M. Gérard, B. Legrand, L. Manin-Ferlazzo, J.L. Oudar, Appl. Phys. Lett. (1998), submitted.
- (1998) Appl. Phys. Lett.
- Rivera, T.¹ Debray, J.P.² Gérard, J.M.³ Legrand, B.⁴ Manin-Ferlazzo, L.⁵ Oudar, J.L.⁶

12
- 0029306025
- U. Oesterle, R.P. Stanley, R. Houdré, M. Gailhanou, M. Ilegems, J. Crystal Growth 150 (1995) 1313.
- (1995) J. Crystal Growth , vol.150 , pp. 1313
- Oesterle, U.¹ Stanley, R.P.² Houdré, R.³ Gailhanou, M.⁴ Ilegems, M.⁵

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