In-situ monitoring of GaN MOVPE by shallow-angle reflectance using ultraviolet light

Journal of Crystal Growth

Volumn 195, Issue 1-4, 1998, Pages 187-191

  Kobayashi, Yasuyuki ^a   Akasaka, Tetsuya ^a   Kobayashi, Naoki ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

GaN; MOVPE; Shallow angle reflectance; Ultra violet light

Indexed keywords

LIGHT INTERFERENCE; LIGHT REFLECTION; METALLORGANIC VAPOR PHASE EPITAXY; OSCILLATIONS; SAPPHIRE; SEMICONDUCTOR GROWTH; SUBSTRATES; SURFACE ROUGHNESS; ULTRAVIOLET RADIATION;

GALLIUM NITRIDE; SHALLOW-ANGLE REFLECTANCE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032477203     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00627-7     Document Type: Article

References (6)

1. S. Nakamura, M. Senoh, S. Nagahara, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, H. Kiyoku, Appl. Phys. Lett. 69 (1996) 4056.
2. S. Nakamura, Jpn. J. Appl. Phys. 30 (1991) L1705.
3. B.P. Keller, S. Keller, D. Kapolnek, W.-N. Jiang, Y.-F. Wu, H. Masui, X. Wu, B. Heying, J.S. Speck, U.K. Mishra, S.P. Denbaars, J. Electron. Mater. 24 (1995) 121.
4. S. Nakamura, Jpn. J. Appl. Phys. 30 (1991) 1348.
5. J. Han, T.-B. Ng, R.M. Biefeld, M.H. Crawford, D.M. Follstaedt, Appl. Phys. Lett. 71 (1997) 3114.
6. H. Amano, N. Watanabe, N. Koide, I. Akasaki, Jpn. J. Appl. Phys. 32 (1993) L1000.