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Volumn 195, Issue 1-4, 1998, Pages 319-322

GaN growth on ozonized sapphire(0 0 0 1) substrates by MOVPE

Author keywords

Auger electron spectroscopy; GaN; MOVPE; Surface cleaning; X ray diffraction

Indexed keywords

CRYSTAL ORIENTATION; MERCURY VAPOR LAMPS; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; OZONIZATION; PHOTOLUMINESCENCE; RADIATION EFFECTS; SAPPHIRE; SEMICONDUCTOR GROWTH; SURFACE CLEANING; SURFACE PROPERTIES; X RAY CRYSTALLOGRAPHY;

EID: 0032477195     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00692-7     Document Type: Article
Times cited : (1)

References (8)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.