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Volumn 195, Issue 1-4, 1998, Pages 319-322
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GaN growth on ozonized sapphire(0 0 0 1) substrates by MOVPE
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Author keywords
Auger electron spectroscopy; GaN; MOVPE; Surface cleaning; X ray diffraction
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Indexed keywords
CRYSTAL ORIENTATION;
MERCURY VAPOR LAMPS;
METALLORGANIC VAPOR PHASE EPITAXY;
MORPHOLOGY;
OZONIZATION;
PHOTOLUMINESCENCE;
RADIATION EFFECTS;
SAPPHIRE;
SEMICONDUCTOR GROWTH;
SURFACE CLEANING;
SURFACE PROPERTIES;
X RAY CRYSTALLOGRAPHY;
CARBON POLLUTION;
SEMICONDUCTING GALLIUM COMPOUNDS;
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EID: 0032477195
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(98)00692-7 Document Type: Article |
Times cited : (1)
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References (8)
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