Design consideration of GaN-based surface emitting lasers

Materials Research Society Symposium - Proceedings

Volumn 449, Issue , 1997, Pages 1151-1159

  Honda, T ^a   Koyama, F ^a   Iga, K ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; LASER ACCESSORIES; MIRRORS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

HIGH REFLECTIVE MIRRORS; NITRIDE SEMICONDUCTORS; THRESHOLD CURRENT; VERTICAL CAVITY SURFACE EMITTING LASERS;

SEMICONDUCTOR LASERS;

EID: 0030644711     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (31)