Overgrowth of trenches with (AlGa)As using metalorganic vapor-phase epitaxy (MOVPE)

Journal of Crystal Growth

Volumn 195, Issue 1-4, 1998, Pages 485-489

  Hofmann, L ^a   Knauer, A ^a   Rechenberg, I ^a   Weyers, M ^a  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

(AIGa)As; Composition profile; MOVPE; Patterned growth

Indexed keywords

CRYSTAL ORIENTATION; DIFFUSION IN SOLIDS; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM PHOSPHIDE;

PATTERNED GROWTH;

SEMICONDUCTOR GROWTH;

EID: 0032477132     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00575-2     Document Type: Article

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