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Volumn 332, Issue 1-2, 1998, Pages 305-311
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A study on the structural distribution of Se-passivated GaAs surface
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Author keywords
Angle resolved X ray photoelectron spectroscopy; As Se anion exchange; GaAs; Low energy electron diffraction; Se passivation
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Indexed keywords
ANNEALING;
ION EXCHANGE;
LOW ENERGY ELECTRON DIFFRACTION;
PASSIVATION;
SEMICONDUCTING SELENIUM;
X RAY PHOTOELECTRON SPECTROSCOPY;
ANGLE-RESOLVED X RAY PHOTOELECTRON SPECTROSCOPY;
SEMICONDUCTING GALLIUM ARSENIDE;
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EID: 0032476348
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/S0040-6090(98)01099-2 Document Type: Article |
Times cited : (2)
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References (17)
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