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Volumn 332, Issue 1-2, 1998, Pages 335-339

TiN reactive sputter deposition studied as a function of the pumping speed

Author keywords

Barrier; Micro electronics; Reactive sputter deposition; Stoichiometry; Thin films; TiN; Titanium nitride

Indexed keywords

ARGON; ION BOMBARDMENT; MIXTURES; NITROGEN; PARTIAL PRESSURE; SPUTTER DEPOSITION; STOICHIOMETRY; THIN FILMS; TITANIUM NITRIDE;

EID: 0032476248     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)01203-6     Document Type: Article
Times cited : (8)

References (10)
  • 1
    • 0005322808 scopus 로고    scopus 로고
    • R. Cheung, J. Klein, K. Tsubouchi, M. Murakami, N. Kobayashi, et al. (Eds.), Materials Research Society, Warrendale, PA
    • L.M. Gignac, Advanced Metallization and Interconnect Systems for ULSI Applications in 1997, in: R. Cheung, J. Klein, K. Tsubouchi, M. Murakami, N. Kobayashi, et al. (Eds.), Materials Research Society, Warrendale, PA, 1998.
    • (1998) Advanced Metallization and Interconnect Systems for ULSI Applications in 1997
    • Gignac, L.M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.