Characteristics of TiN films sputtered under optimized conditions of metallic mode deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 2, 1997, Pages 595-600

  Sumi, Hirofumi ^a   Inoue, Hajime ^a   Taguchi, Mitsuru ^a   Sugano, Yukiyasu ^a   Masuya, Haruko ^a   Ito, Naohiko ^b   Kishida, Satoru ^b   Tokutaka, Heizo ^b  

^a SONY CORPORATION   (Japan)

^b Department of Electrical and Electronic Engineering ^*  (Japan)

Author keywords

Collimator; DC magnetron; Density; Deposition rate; Nitride mode; Resistivity; TEM; TiN(111); XPS; XRD

Indexed keywords

COLLIMATORS; METALLIC MODE DEPOSITION;

CRYSTAL ORIENTATION; DENSITY (SPECIFIC GRAVITY); ELECTRIC CONDUCTIVITY OF SOLIDS; MAGNETRON SPUTTERING; SPUTTER DEPOSITION; THERMAL STRESS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

TITANIUM NITRIDE;

EID: 0031071145     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.595     Document Type: Article

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