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Volumn 135, Issue 1-4, 1998, Pages 233-237

Growth of completely (110)- and (111)-oriented MgO films on H-terminated (100) silicon substrate by pulsed laser deposition

(4) Chen, X Y a Yang, B a Liu, Z G a Shi, L J b

a NANJING UNIVERSITY (China)

b NANJING UNIVERSITY OF SCIENCE AND TECHNOLOGY (China)

Author keywords

MgO film; Pulsed laser deposition; Silicon substrate

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL ORIENTATION; DEPOSITION; FILM GROWTH; LATTICE CONSTANTS; PRESSURE EFFECTS; PULSED LASER APPLICATIONS; SILICON; SUBSTRATES; SURFACE PHENOMENA; SURFACE ROUGHNESS;

PULSED LASER DEPOSITION (PLD);

MAGNESIA;

EID: 0032475213 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/S0169-4332(98)00291-8 Document Type: Article

Times cited : (12)

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