Study of the growth mechanism of ZnCdSe by MBE using the mass spectrometer

Journal of Crystal Growth

Volumn 193, Issue 1-2, 1998, Pages 43-49

  Okuyama, Hiroyuki ^a   Kijima, Satoru ^a   Sanaka, Yumi ^a   Ishibashi, Akira ^a  

^a SONY CORPORATION   (Japan)

Author keywords

Adatom; Desorption; Incorporation; Mass spectrometer; Molecular beam epitaxy (MBE); Sticking coefficient; Surface; ZnCdSe; ZnSe

Indexed keywords

DESORPTION; MASS SPECTROMETERS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; SURFACES;

ADATOM; BAYARD ALPERT GAUGE; GROWTH RATE; INCORPORATION; STICKING COEFFICIENT;

SEMICONDUCTOR GROWTH;

EID: 0032475208     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00470-9     Document Type: Article

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