Growth mechanism of II-VI compound semiconductors by molecular beam epitaxy

Journal of Crystal Growth

Volumn 175-176, Issue PART 1, 1997, Pages 587-592

  Okuyama, Hiroyuki ^a   Kawasumi, Takayuki ^a   Ishibashi, Akira ^a   Ikeda, Masao ^a  

^a SONY CORPORATION   (Japan)

Author keywords

Adatom; Cluster; Desorption; MBE; RHEED; ZnMgSSe

Indexed keywords

DESORPTION; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTOR GROWTH;

ADATOMS;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0031143963     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)01179-7     Document Type: Article

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