Multiple-bandgap photoelectrochemistry: Inverted semiconductor ohmic regenerative electrochemistry

Journal of Physical Chemistry B

Volumn 102, Issue 14, 1998, Pages 2546-2554

  Licht, S ^a   Khaselev, O ^a   Ramakrishnan, P A ^a   Soga, T ^b   Umeno, M ^b  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

^b NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROLYTES; ENERGY CONVERSION; ENERGY GAP; FERMI LEVEL; LIGHT ABSORPTION; OHMIC CONTACTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SOLVENTS;

ELECTROCATALYST; INVERTED BANDGAP ALIGNMENT; MULTIPLE BANDGAP PHOTOELECTROCHEMISTRY; PHOTOCORROSION; PHOTOELECTROCHEMICAL INTERACTION; THERMODYNAMIC ELECTROCHEMICAL POTENTIAL WINDOW;

ELECTROCHEMISTRY;

EID: 0032473713     PISSN: 15206106     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp9800564     Document Type: Article

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