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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 2 SUPPL. B, 1996, Pages 1401-1404

High-efficiency monolithic three-terminal GaAs/Si tandem solar cells fabricated by metalorganic chemical vapor deposition

(4) Soga, Tetsuo a Yang, Mingju a,b Jimbo, Takashi a Umeno, Masayoshi a

a NAGOYA INSTITUTE OF TECHNOLOGY (Japan)

b TOYOTA TECHNOLOGICAL INSTITUTE (Japan)

Author keywords

Dislocation; GaAs Si tandem solar cell; MOCVD; TEM; Thermal cycle annealing

Indexed keywords

ANNEALING; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; FABRICATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOVOLTAIC CELLS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; THERMAL CYCLING; TRANSMISSION ELECTRON MICROSCOPY;

CRYSTAL QUALITY; GRADED BAND EMITTER LAYER; GROWTH TEMPERATURE; MONOLITHIC TANDEM SOLAR CELLS; SOLAR CELL STRUCTURE;

SOLAR CELLS;

EID: 0030080475 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.35.1401 Document Type: Article

Times cited : (27)

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