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Volumn 315, Issue 1-2, 1998, Pages 123-126
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Influence of reactive gas pressure on the deposition of an AlN protective film for organic photoconductor
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Author keywords
AlN film; Electrophotographic properties; Microhardness; N2 pressure; Organic photoconductor
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Indexed keywords
ALUMINUM COMPOUNDS;
HARDNESS;
NITRIDES;
PHOTOCONDUCTING MATERIALS;
PRESSURE EFFECTS;
SPUTTER DEPOSITION;
SURFACE ROUGHNESS;
ALUMINUM NITRIDES;
ELECTROPHOTOGRAPHIC PROPERTIES;
REACTIVE GAS PRESSURES;
PROTECTIVE COATINGS;
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EID: 0032473282
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/S0040-6090(97)00269-1 Document Type: Article |
Times cited : (9)
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References (9)
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