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Volumn 315, Issue 1-2, 1998, Pages 123-126

Influence of reactive gas pressure on the deposition of an AlN protective film for organic photoconductor

Author keywords

AlN film; Electrophotographic properties; Microhardness; N2 pressure; Organic photoconductor

Indexed keywords

ALUMINUM COMPOUNDS; HARDNESS; NITRIDES; PHOTOCONDUCTING MATERIALS; PRESSURE EFFECTS; SPUTTER DEPOSITION; SURFACE ROUGHNESS;

EID: 0032473282     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(97)00269-1     Document Type: Article
Times cited : (9)

References (9)
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  • 3
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    • Influence of AlN protective film thickness on the hardness and electrophotographic properties of organic photoconductors
    • X.S. Miao, Y.C. Chan, C.K.H. Wong, D.P. Webb, Y.W. Lam, K.M. Leung, D.S. Chiu, Influence of AlN protective film thickness on the hardness and electrophotographic properties of organic photoconductors, J. Electron. Mater. 26 (4) (1997) 387-390.
    • (1997) J. Electron. Mater. , vol.26 , Issue.4 , pp. 387-390
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  • 4
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    • Nguyen, Q.D.1    Monz, K.H.2    Pulker, H.K.3
  • 5
    • 0028517711 scopus 로고
    • Dielectric properties of AlN films prepared by laser-induced chemical vapor deposition
    • X. Li, T.L. Tansley, V.W.L. Chin, Dielectric properties of AlN films prepared by laser-induced chemical vapor deposition, Thin Solid Films 250 (1994) 263.
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    • The modification of electrophotographic and mechanical properties of organic photoconductors by ultra-violet irradiation
    • C.K.H. Wong, Y.C. Chan, Y.W. Lam, D.P. Webb, K.M. Leung, D. Chiu, The modification of electrophotographic and mechanical properties of organic photoconductors by ultra-violet irradiation, J. Electron. Mater. 25 (1996) 1451.
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    • Wong, C.K.H.1    Chan, Y.C.2    Lam, Y.W.3    Webb, D.P.4    Leung, K.M.5    Chiu, D.6
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    • The use of process modelling for optimum design of reactive sputtering
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.