Energy loss of channeled 290 MeV/u C6+ ions in a Si crystal

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 135, Issue 1-4, 1998, Pages 132-137

  Ito, T ^a   Azuma, T ^a   Komaki, K ^a   Yamazaki, Y ^a   Sano, M ^b,c   Torikoshi, M ^b   Kitagawa, A ^b   Takada, E ^b   Murakami, T ^b  

^a UNIVERSITY OF TOKYO   (Japan)

^b NATIONAL INSTITUTE OF RADIOLOGICAL SCIENCES   (Japan)

^c HIGH ENERGY ACCELERATOR RESEARCH ORGANIZATION KEK   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; CARRIER CONCENTRATION; CRYSTAL ORIENTATION; ENERGY DISSIPATION; ION BOMBARDMENT; SILICON;

ELECTRONIC STOPPING POWER; ENERGY LOSS SPECTROSCOPY; MOLIERE POTENTIAL;

ION IMPLANTATION;

EID: 0032472716     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(97)00587-9     Document Type: Article

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