The shot noise impact on resist roughness in EUV lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3331, Issue , 1998, Pages 531-536

  Hutchinson, John M ^a  

^a INTEL CORPORATION   (United States)

Author keywords

Lithography; Photoresist; Shot noise; Simulation

Indexed keywords

COMPUTER SIMULATION; LITHOGRAPHY; PHOTONS; ULTRAVIOLET RADIATION;

PHOTON ENERGY;

SHOT NOISE;

EID: 0032402534     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.309612     Document Type: Conference Paper

References (5)

1. A statistical analysis of ultraviolet, x-ray and charged-particle lithographies
2. Reduction in x-ray lithography shot noise exposure limit by dissolution phenomena
3. Resist pattern fluctuation limits in exterme-ultraviolet lithography
4. Chemical amplification in submicron lithography: An information theoretic analysis
5. Correlation of UVIIHS resist chemistry to dissolution rate measurements