Koehler illumination-based method to improve beam size controllability

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3331, Issue , 1998, Pages 503-510

  Hattori, Kiyoshi ^a   Sunaoshi, Hitoshi ^a   Ando, Atsushi ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Beam calibration method; Beam current density; Beam size deviation; Beam stitching error; Condenser lens; Critical dimension; Electron beam lithography; Electron optics; Koehler illumination; Objective lens

Indexed keywords

CURRENT DENSITY; ELECTRON BEAM LITHOGRAPHY; ELECTRON OPTICS; MASKS;

KOEHLER ILLUMINATION;

ELECTRON BEAMS;

EID: 0032401407     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.309606     Document Type: Conference Paper

References (6)

1. Evaluation of shaping gain adjustment accuracy using AFM in variably shaped EB writing systems
2. Contamination charge up effect in a variably shaped electron beam writer
3. Direct writing of 0.1 micron MOS transistor gate by high voltage variable shaped electron beam
4. Koehler illumination and brightness measurement with lanthan hexaboride cathodes
5. Electron-beam direct writing system EX-8D employing character projection exposure method
6. Patterning accuracy estimation of electron beam direct-writing system EX-8D