Investigation of various factors' influence on charging effects in linewidth metrology

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3332, Issue , 1998, Pages 81-93

  Ko, Yeong Uk ^a  

^a Korea Research Institute of Standards and Science   (South Korea)

Author keywords

Charging effect; Linewidth measurement; Low voltage metrology; Monte Carlo simulation; Scanning electron microscope; Secondary electron

Indexed keywords

ELECTRIC CHARGE MEASUREMENT; ELECTRIC INSULATORS; MONTE CARLO METHODS; OPTICAL VARIABLES MEASUREMENT; POISSON EQUATION; POLYMETHYL METHACRYLATES; SCANNING ELECTRON MICROSCOPY; SILICON WAFERS;

CHARGING EFFECTS; LINEWIDTH METROLOGY;

SEMICONDUCTOR DEVICE TESTING;

EID: 0032401382     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.308787     Document Type: Conference Paper

References (13)

1. Charging effects in low-voltage SEM metrology
2. Charging phenomena in E-beam metrology
3. Analysis of charging effects during observation of trench structures by scanning electron microscope
4. Metrology of high-resolution resist structures on insulating substrates
5. Secondary electron line scans over high resolution resist images: Theoretical and experimental investigation of induced local electric field effects
6. Investigation of the effects of charging in SEM-based CD metrology
7. Empirical forms for the electron/atom elastic scattering cross sections from 0.1 to 30 keV
8. An empirical stopping power relationship for low-energy electrons
9. Dynamic double layer model:Description of time dependent charging phenomena in insulators under electron beam irradiation
10. Electron trajectory tracking algorithms for analyzing voltage contrast signals in the scanning electron microscope
11. A precise and automatic very large scale integrated circuit pattern linewidth measurement method using a scanning electron microscope