Dioxygen insertion into the axial Si-C bonds of organosilicon porphyrins

Chemistry Letters

Volumn , Issue 5, 1998, Pages 453-454

  Zheng, Jian Yu ^a   Konishi, Katsuaki ^a   Aida, Takuzo ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0032389291     PISSN: 03667022     EISSN: None     Source Type: Journal    
DOI: 10.1246/cl.1998.453     Document Type: Article

References (19)

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3. J. -Y, Zheng, K. Konishi, and T. Aida, submitted.
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7. 3).
8. 3]) were also observed (10% yield based on the initial amount of 1).
9. 2): λmax 597, 555, 424 nm.
10. -3, R = 0.084, Rw = 0.105.
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