Thickness dependence of exciton absorption in pure GaAs crystals at the "prequantum" limit

Physics of the Solid State

Volumn 40, Issue 5, 1998, Pages 800-802

  Aliev, G N ^a   Luk'yanova, N V ^b   Seisyan R P ^b  

^a INSTITUTE OF PHYSICS   (Russian Federation)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0032362069     PISSN: 10637834     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1130401     Document Type: Article

References (10)

1. R. P. Seǐsyan, The Spectroscopy of Diamagnetic Excitons [in Russian], Nauka, Moscow (1984), 282 pp.
2. G. N. Aliev, N. V. Luk'yanova, and R. P. Seǐsyan, Fiz. Tverd. Tela 38, 1067 (1996) [Semiconductors 38, 590 (1996)].
3. G. N. Aliev, N. V. Luk'yanova, and R. P. Seǐsyan, Fiz. Tverd. Tela 38, 1067 (1996) [Semiconductors 38, 590 (1996)].
4. M. D. Sturge, in Excitons, E. I. Rashba and M. D. Sturge (Eds.), North-Holland, Amsterdam (1982), p. 9.
5. D. D. Sell, Phys. Rev. 86, 3750 (1972).
6. C. Weisbuch, in Semiconductors and Semimetals, B. Dingle (Ed.), Academic Press (1987), Vol. 24, p. 1.
7. G. N. Aliev, N. V. Luk'yanova, R. P. Seisyan, R. Vladimirova, H. Gibbs, and C. Khitrova, Phys. Status Solidi A 164, 193 (1997).
8. V. A. Kosobukin, R. P. Seisyan, and S. A. Vaganov, Semicond. Sci. Technol. 8, 1235 (1993).
9. G. N. Aliev, O. S. Coschug-Toates, V. A. Kosobukin, R. P. Seisyan, and S. A. Vaganov, Proc. SPIE, J. Singh (Ed.), Vol. 2362, p. 561.
10. N. N. Akmediev, Zh. Éksp. Teor. Fiz. 4, 1534 (1980) [sic].