Exciton-polariton behaviour of the absorption edge of thin GaAs crystals with the "super-quantum" thickness and MQW enlarged barriers

Physica Status Solidi (A) Applied Research

Volumn 164, Issue 1, 1997, Pages 193-197

  Aliev, G N ^a   Lukyanova, N V ^a   Seisyan, R P ^a   Vladimirova, M R ^a   Gibbs, H ^b   Khitrova, G ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b UNIVERSITY OF ARIZONA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; ELECTRON RESONANCE; EXCITONS; LIGHT ABSORPTION; LIGHT INTERFERENCE; MATRIX ALGEBRA; SEMICONDUCTING FILMS; SEMICONDUCTOR QUANTUM WELLS;

EXCITON POLARITON RESONANCES;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031268792     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(199711)164:1<193::AID-PSSA193>3.0.CO;2-P     Document Type: Article

References (7)

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4. N. N. AKHNMEDIEV, Soviet Phys. - J. Exper. Theor. Phys. 4, 1534 (1980).
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7. E. L. IVCHENKO. Spatial Dispersion Effects in Exciton Resonance Region, in: Excitons. Ed. E. I. RASHBA and M. D. STURGE, Elsevier Publ. Co., Amsterdam/New York 1982.