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Volumn 15, Issue 10, 1998, Pages 724-726
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Atomic force microscopy on the Ga0.16in0.84As0.80Sb0.20 epilayer grown by metalorganic chemical vapor deposition
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Author keywords
[No Author keywords available]
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Indexed keywords
ANTIMONY COMPOUNDS;
ARSENIC COMPOUNDS;
ATOMIC FORCE MICROSCOPY;
EPILAYERS;
III-V SEMICONDUCTORS;
INDIUM COMPOUNDS;
SURFACE DEFECTS;
ATOMIC-FORCE-MICROSCOPY;
EPILAYER THICKNESS;
EPILAYERS GROWN;
GROWTH MODES;
GROWTH PROCESS;
METAL-ORGANIC CHEMICAL VAPOUR DEPOSITIONS;
SUBSTRATE SURFACE;
THREE DIMENSIONAL (3D) GROWTH;
TWO-DIMENSIONAL;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
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EID: 0032352176
PISSN: 0256307X
EISSN: None
Source Type: Journal
DOI: 10.1088/0256-307X/15/10/009 Document Type: Article |
Times cited : (1)
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References (10)
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