Study of GaInAsSb epilayer by scanning electron acoustic microscopy

Solid State Communications

Volumn 97, Issue 11, 1996, Pages 975-977

  Li, Shuwei ^a   Jin, Yixin ^a   Zhang, Baolin ^a   Ning, Yongqiang ^a   Zhou, Tianming ^a   Jiang, Hong ^a   Yuan, Guang ^a  

^a CHANGCHUN INSTITUTE OF OPTICS   (China)

Author keywords

A. semiconductors; B. surface and interface; C. grain boundaries

Indexed keywords

ACOUSTIC MICROSCOPES; GRAIN BOUNDARIES; HYDROGEN; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR GROWTH; SUBSTRATES; SURFACES;

GROWTH TEMPERATURE; SCANNING ELECTRON ACOUSTIC MICROSCOPY; TRIMETHYLANTIMONY; TRIMETHYLGALLIUM; TRIMETHYLINDIUM;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030109322     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1098(95)00709-1     Document Type: Article

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