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Volumn 205, Issue 1, 1998, Pages 287-293

New Approach for Determination of the Critical Behavior of Conductivity near the Metal-Insulator Transition in Doped Semiconductors

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Indexed keywords


EID: 0032330830     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-3951(199801)205:1<287::AID-PSSB287>3.0.CO;2-C     Document Type: Article
Times cited : (6)

References (14)
  • 3
    • 0040793613 scopus 로고
    • E. ABRAHAMS, P. W. ANDERSON, D. C. LICCIARDELLO, and T. V. RAMAKRISHNAN, Phys. Rev. Lett. 42, 693 (1979). P. A. LEE and T. V. RAMAKRISHNAN, Rev. Mod. Phys. 57, 287 (1985).
    • (1985) Rev. Mod. Phys. , vol.57 , pp. 287
    • Lee, P.A.1    Ramakrishnan, T.V.2
  • 13
    • 0347976933 scopus 로고
    • 65 Years in Physiscs
    • Eds. N. F. MOTT and A. S. ALEXANDROV
    • Sir NEVILL MOTT, 65 Years in Physiscs, Eds. N. F. MOTT and A. S. ALEXANDROV, World Scientific Ser. in 20th Century Physics, Vol. 12, 1995 (p. 647).
    • (1995) World Scientific Ser. in 20th Century Physics , vol.12 , pp. 647
    • Mott, N.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.