Quantitative analysis of delocalization in the vicinity of the metal-insulator transition in doped semiconductors

Journal of Physics Condensed Matter

Volumn 9, Issue 45, 1997, Pages 9873-9880

  Shlimak, I ^a   Kaveh, M ^a   Ussyshkin, R ^a   Ginodman, V ^a   Resnick, L ^a   Gantmakher, V F ^b  

^a BAR ILAN UNIVERSITY   (Israel)

^b INSTITUTE OF SOLID STATE PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; ELECTRIC CONDUCTIVITY; PHASE TRANSITIONS; SEMICONDUCTING ANTIMONY; SEMICONDUCTING GERMANIUM; TEMPERATURE;

COULOMB INTERACTION; DELOCALIZATION; IMPURITY CONCENTRATION; METAL INSULATOR TRANSITION;

SEMICONDUCTOR DOPING;

EID: 0031268859     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/9/45/015     Document Type: Article

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