Study of InAs quantum dots in GaAs prepared on misoriented substrates

Thin Solid Films

Volumn 336, Issue 1-2, 1998, Pages 80-83

  Oswald, J ^a   Hulicius, E ^a   Vorlicek V ^a   Pangrac J ^a   Melichar, K ^a   Simecek T ^a   Lippold, G ^b   Riede, V ^b  

^a INSTITUTE OF PHYSICS   (Czech Republic)

^b UNIVERSITY OF LEIPZIG   (Germany)

Author keywords

Photoluminescence; Quantum dots; Raman spectroscopy

Indexed keywords

ALLOYING; CRYSTAL ORIENTATION; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; STRAIN; SUBSTRATES;

QUASI ZERO-DIMENSIONAL SEMICONDUCTOR QUANTUM DOTS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0032321278     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)01299-1     Document Type: Article

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