Preparation of ferroelectric YMnO3 thin films for nonvolatile memory devices by metalorganic chemical vapor deposition

Integrated Ferroelectrics

Volumn 21, Issue 1-4, 1998, Pages 319-329

  Shin, Woong Chul ^a   Choi, Kyu Jeong ^a   Yang, Cheol Hoon ^a   Park, Jong Bong ^a   Yoon, Soon Gil ^a  

^a Chungnam National University   (South Korea)

Author keywords

Metalorganic chemical vapor deposition; Nonvolatile memory devices; YMnO3

Indexed keywords

COERCIVE FORCE; CURRENT DENSITY; FILM PREPARATION; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NONVOLATILE STORAGE; PERMITTIVITY; POLARIZATION; REMANENCE; SUBSTRATES; THIN FILMS; YTTRIUM COMPOUNDS;

FERROELECTRIC THIN FILMS; HOT-WALL TYPE METALLORGANIC CHEMICAL VAPOR DEPOSITION;

DIELECTRIC FILMS;

EID: 0032318336     PISSN: 10584587     EISSN: None     Source Type: Journal    
DOI: 10.1080/10584589808202073     Document Type: Article

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