In-situ low temperature growth and orientation control in MOCVD PZT/RuO2 thin film heterostructures on SiO2/Si substrates

Integrated Ferroelectrics

Volumn 21, Issue 1-4, 1998, Pages 291-304

  Bai, G R ^a   Wang, A ^a   Tsu, I Fei ^a   Foster, C M ^a   Auciello, O ^a  

^a ARGONNE NATIONAL LABORATORY   (United States)

Author keywords

Ferroelectric; MOCVD; PZT; RuO2; Thin films

Indexed keywords

CRYSTAL GROWTH; CRYSTAL ORIENTATION; ELECTRODES; FILM GROWTH; GRAIN SIZE AND SHAPE; HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; POLARIZATION; REMANENCE; SURFACE ROUGHNESS; THIN FILMS; X RAY CRYSTALLOGRAPHY;

ORIENTATION CONTROL; SATURATION POLARIZATION;

DIELECTRIC FILMS;

EID: 0032316433     PISSN: 10584587     EISSN: None     Source Type: Journal    
DOI: 10.1080/10584589808202071     Document Type: Article

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