Multichannel process monitor for real-time film thickness and rate measurements in dry etching and deposition

Vacuum

Volumn 51, Issue 4, 1998, Pages 497-502

  Heinrich, F ^a   Heinze, D ^a   Kowalski, T ^a   Hoffmann, P ^b   Kopperschmidt, P ^c  

^a PAS Plasma Analytics Systems GmbH   (Germany)

^b Fraunhofer Inst F S   (Germany)

^c MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; DRY ETCHING; EMISSION SPECTROSCOPY; INTERFEROMETRY; ION BEAMS; ONLINE SYSTEMS; PLASMA ETCHING; REAL TIME SYSTEMS;

ION BEAM ETCHING; MULTICHANNEL PROCESS MONITOR SYSTEMS; OPTICAL EMISSION SPECTROSCOPY (OES);

PROCESS CONTROL;

EID: 0032310181     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0042-207X(98)00241-3     Document Type: Article

References (14)

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